The ideal height of the vertical DG-MOSFET pillar was found to be at 0.265 µm. The minimum value of sub-threshold swing (SS) was found to be 64.7mV/dec with threshold voltage (V TH) of 0.895V. Simulates real behavior of concrete and reinforced concrete structures including concrete cracking, crushing and reinforcement yielding. From the observation made, the value of sub-threshold swing (SS) was able to be varied by adjusting the height of the silicon pillar. ATENA stands for Advanced Tool for Engineering Nonlinear Analysis. Smart Browser Free is free BIM software for browsing Revit® families. Cut Opening Free uses Revit® ‘Interference Check’ results to create holes in a project. By utilizing SILVACO TCAD software, an n-channel vertical DG-MOSFET was successfully designed while keeping the sub-threshold swing (SS) value as minimum as possible. SMART SELECT automatically selects Revit® elements in desired room or space. In order to ensure that the transistor possess a superb turn-off characteristic, the subs-threshold swing (SS) must be kept at minimum value (60-90mV/dec). Software Matlab - software environment for engineers Abaqus - Finite element analysis Solidworks - CAD AutoDESK products - Revit, Robot, CAD Mathematica. By having two gates, both gates are able to control the channel from both sides and possess better electrostatic control over the channel. The gate to channel coupling in vertical DG-MOSFET are doubled, thus resulting in higher current density. Vertical Double Gate (DG) Metal Oxide Semiconductor Field Effect Transistor (MOSFET) is believed to suppress various short channel effect problems.
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